ZXMHC6A07T8TA
ZXMHC6A07T8TA
Artikelnummer:
ZXMHC6A07T8TA
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 2N/2P-CH 60V SM8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
34506 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ZXMHC6A07T8TA.pdf

Einführung

We can supply ZXMHC6A07T8TA, use the request quote form to request ZXMHC6A07T8TA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ZXMHC6A07T8TA.The price and lead time for ZXMHC6A07T8TA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ZXMHC6A07T8TA.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:SM8
Serie:-
Rds On (Max) @ Id, Vgs:300 mOhm @ 1.8A, 10V
Leistung - max:1.3W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-223-8
Andere Namen:ZXMHC6A07T8TR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:20 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:166pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 10V
Typ FET:2 N and 2 P-Channel (H-Bridge)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.6A, 1.3A 1.3W Surface Mount SM8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.6A, 1.3A
Basisteilenummer:ZXMHC6A07T8
Email:[email protected]

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