US6M2GTR
US6M2GTR
Artikelnummer:
US6M2GTR
Hersteller:
LAPIS Semiconductor
Beschreibung:
2.5V DRIVE NCH+PCH MOSFET, 6 PIN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
44380 Pieces
Lieferzeit:
1-2 days
Datenblatt:
US6M2GTR.pdf

Einführung

We can supply US6M2GTR, use the request quote form to request US6M2GTR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number US6M2GTR.The price and lead time for US6M2GTR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# US6M2GTR.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 1mA, 2V @ 1mA
Supplier Device-Gehäuse:TUMT6
Serie:-
Rds On (Max) @ Id, Vgs:240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V
Leistung - max:1W
Verpackung:Original-Reel®
Verpackung / Gehäuse:6-SMD, Flat Leads
Andere Namen:US6M2GDKR
Betriebstemperatur:150°C
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:10 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:80pF @ 10V, 150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 4.5V, 2.1nC @ 4.5V
Typ FET:N and P-Channel
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):30V, 20V
detaillierte Beschreibung:Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.5A, 1A
Email:[email protected]

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