TSM8N80CI C0G
TSM8N80CI C0G
Artikelnummer:
TSM8N80CI C0G
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET N-CHANNEL 800V 8A ITO220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
78627 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TSM8N80CI C0G.pdf

Einführung

We can supply TSM8N80CI C0G, use the request quote form to request TSM8N80CI C0G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TSM8N80CI C0G.The price and lead time for TSM8N80CI C0G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TSM8N80CI C0G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:ITO-220
Serie:-
Rds On (Max) @ Id, Vgs:1.05 Ohm @ 4A, 10V
Verlustleistung (max):40.3W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3 Full Pack, Isolated Tab
Andere Namen:TSM8N80CI C0G-ND
TSM8N80CIC0G
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1921pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 8A (Tc) 40.3W (Tc) Through Hole ITO-220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8A (Tc)
Email:[email protected]

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