TSM70N1R4CH C5G
TSM70N1R4CH C5G
Artikelnummer:
TSM70N1R4CH C5G
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET N-CH 700V 3.3A TO251
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
45567 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TSM70N1R4CH C5G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-251 (IPAK)
Serie:-
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 1.2A, 10V
Verlustleistung (max):38W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Short Leads, IPak, TO-251AA
Andere Namen:TSM70N1R4CH C5G-ND
TSM70N1R4CHC5G
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:370pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):700V
detaillierte Beschreibung:N-Channel 700V 3.3A (Tc) 38W (Tc) Through Hole TO-251 (IPAK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.3A (Tc)
Email:[email protected]

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