TSM4N80CZ C0G
TSM4N80CZ C0G
Artikelnummer:
TSM4N80CZ C0G
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET N-CHANNEL 800V 4A TO220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
35996 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TSM4N80CZ C0G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220
Serie:-
Rds On (Max) @ Id, Vgs:3 Ohm @ 1.2A, 10V
Verlustleistung (max):38.7W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:TSM4N80CZ C0G-ND
TSM4N80CZC0G
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:955pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 4A (Tc) 38.7W (Tc) Through Hole TO-220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A (Tc)
Email:[email protected]

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