TSM110NB04CR RLG
TSM110NB04CR RLG
Artikelnummer:
TSM110NB04CR RLG
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET SINGLE N-CHANNEL TRENCH
verfügbare Anzahl:
55823 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TSM110NB04CR RLG.pdf

Einführung

We can supply TSM110NB04CR RLG, use the request quote form to request TSM110NB04CR RLG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TSM110NB04CR RLG.The price and lead time for TSM110NB04CR RLG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TSM110NB04CR RLG.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-PDFN (5x6)
Serie:-
Rds On (Max) @ Id, Vgs:11 mOhm @ 12A, 10V
Verlustleistung (max):3.1W (Ta), 68W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerLDFN
Andere Namen:TSM110NB04CRRLGTR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:10 Weeks
Eingabekapazität (Ciss) (Max) @ Vds:1443pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:N-Channel 40V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Ta), 54A (Tc)
Email:[email protected]

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