TPH3R704PL,L1Q
TPH3R704PL,L1Q
Artikelnummer:
TPH3R704PL,L1Q
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 40V 92A TSON
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
22538 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TPH3R704PL,L1Q.pdf

Einführung

We can supply TPH3R704PL,L1Q, use the request quote form to request TPH3R704PL,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPH3R704PL,L1Q.The price and lead time for TPH3R704PL,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPH3R704PL,L1Q.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.4V @ 0.2mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOP Advance (5x5)
Serie:U-MOSIX-H
Rds On (Max) @ Id, Vgs:3.7 mOhm @ 46A, 10V
Verlustleistung (max):960mW (Ta), 81W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerVDFN
Andere Namen:TPH3R704PL,L1Q(M
TPH3R704PLL1QTR
Betriebstemperatur:175°C
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2500pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:N-Channel 40V 92A (Tc) 960mW (Ta), 81W (Tc) Surface Mount 8-SOP Advance (5x5)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:92A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung