TK40P04M1(T6RSS-Q)
Artikelnummer:
TK40P04M1(T6RSS-Q)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 40V 40A 3DP 2-7K1A
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
10213 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.TK40P04M1(T6RSS-Q).pdf2.TK40P04M1(T6RSS-Q).pdf

Einführung

We can supply TK40P04M1(T6RSS-Q), use the request quote form to request TK40P04M1(T6RSS-Q) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK40P04M1(T6RSS-Q).The price and lead time for TK40P04M1(T6RSS-Q) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK40P04M1(T6RSS-Q).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.3V @ 200µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DP
Serie:U-MOSVI-H
Rds On (Max) @ Id, Vgs:11 mOhm @ 20A, 10V
Verlustleistung (max):47W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1920pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:N-Channel 40V 40A (Ta) 47W (Tc) Surface Mount DP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:40A (Ta)
Email:[email protected]

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