TK20N60W,S1VF
TK20N60W,S1VF
Artikelnummer:
TK20N60W,S1VF
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 600V 20A TO-247
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
14545 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TK20N60W,S1VF.pdf

Einführung

We can supply TK20N60W,S1VF, use the request quote form to request TK20N60W,S1VF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK20N60W,S1VF.The price and lead time for TK20N60W,S1VF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK20N60W,S1VF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.7V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247
Serie:DTMOSIV
Rds On (Max) @ Id, Vgs:155 mOhm @ 10A, 10V
Verlustleistung (max):165W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Andere Namen:TK20N60W,S1VF(S
TK20N60WS1VF
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1680pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 20A (Ta) 165W (Tc) Through Hole TO-247
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Ta)
Email:[email protected]

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