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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > STV160NF03LAT4
STV160NF03LAT4
STV160NF03LAT4
Artikelnummer:
STV160NF03LAT4
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 30V 160A POWERSO-10
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
53386 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STV160NF03LAT4.pdf
Anfrage

Einführung

We can supply STV160NF03LAT4, use the request quote form to request STV160NF03LAT4 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STV160NF03LAT4.The price and lead time for STV160NF03LAT4 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STV160NF03LAT4.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±15V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:10-PowerSO
Serie:STripFET™
Rds On (Max) @ Id, Vgs:3 mOhm @ 80A, 10V
Verlustleistung (max):210W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerSO-10 Exposed Bottom Pad
Betriebstemperatur:175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:160nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 160A (Tc) 210W (Tc) Surface Mount 10-PowerSO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:160A (Tc)
Email:[email protected]

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