STP12N60M2
STP12N60M2
Artikelnummer:
STP12N60M2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 600V 9A TO-220AB
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
14189 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STP12N60M2.pdf

Einführung

We can supply STP12N60M2, use the request quote form to request STP12N60M2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STP12N60M2.The price and lead time for STP12N60M2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STP12N60M2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220
Serie:MDmesh™ M2
Rds On (Max) @ Id, Vgs:450 mOhm @ 4.5A, 10V
Verlustleistung (max):85W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:497-16020-5
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:42 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:538pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 9A (Tc) 85W (Tc) Through Hole TO-220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9A (Tc)
Email:[email protected]

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