STH410N4F7-2AG
STH410N4F7-2AG
Artikelnummer:
STH410N4F7-2AG
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 40V H2PAK-2
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
69780 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STH410N4F7-2AG.pdf

Einführung

We can supply STH410N4F7-2AG, use the request quote form to request STH410N4F7-2AG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STH410N4F7-2AG.The price and lead time for STH410N4F7-2AG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STH410N4F7-2AG.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:H2Pak-2
Serie:Automotive, AEC-Q101, STripFET™ F7
Rds On (Max) @ Id, Vgs:1.1 mOhm @ 90A, 10V
Verlustleistung (max):365W (Tc)
Verpackung:Original-Reel®
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:497-16421-6
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:38 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:11500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:141nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2Pak-2
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:200A (Tc)
Email:[email protected]

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