STH185N10F3-2
STH185N10F3-2
Artikelnummer:
STH185N10F3-2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 100V 180A H2PAK-2
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
67202 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STH185N10F3-2.pdf

Einführung

We can supply STH185N10F3-2, use the request quote form to request STH185N10F3-2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STH185N10F3-2.The price and lead time for STH185N10F3-2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STH185N10F3-2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:H2Pak-2
Serie:STripFET™ F3
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 60A, 10V
Verlustleistung (max):315W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:497-15311-1
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:38 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:6665pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:114.6nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:180A (Tc)
Email:[email protected]

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