STD11NM65N
STD11NM65N
Artikelnummer:
STD11NM65N
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N CH 650V 11A DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
32129 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STD11NM65N.pdf

Einführung

We can supply STD11NM65N, use the request quote form to request STD11NM65N pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STD11NM65N.The price and lead time for STD11NM65N depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STD11NM65N.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DPAK
Serie:MDmesh™ II
Rds On (Max) @ Id, Vgs:455 mOhm @ 5.5A, 10V
Verlustleistung (max):110W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:497-13352-2
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11A (Tc)
Email:[email protected]

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