STB4N62K3
STB4N62K3
Artikelnummer:
STB4N62K3
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 620V 3.8A D2PAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
67435 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STB4N62K3.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:D2PAK
Serie:SuperMESH3™
Rds On (Max) @ Id, Vgs:1.95 Ohm @ 1.9A, 10V
Verlustleistung (max):70W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:497-10645-1
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:450pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):620V
detaillierte Beschreibung:N-Channel 620V 3.8A (Tc) 70W (Tc) Surface Mount D2PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.8A (Tc)
Email:[email protected]

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