SQJ504EP-T1_GE3
SQJ504EP-T1_GE3
Artikelnummer:
SQJ504EP-T1_GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N/P CHAN 40V POWERPAK SO-
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
8264 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SQJ504EP-T1_GE3.pdf

Einführung

We can supply SQJ504EP-T1_GE3, use the request quote form to request SQJ504EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ504EP-T1_GE3.The price and lead time for SQJ504EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ504EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Supplier Device-Gehäuse:PowerPAK® SO-8 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:7.5 mOhm @ 8A, 10V, 17 mOhm @ 8A, 10V
Leistung - max:34W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:SQJ504EP-T1_GE3TR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1900pF @ 25V, 4600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V, 85nC @ 10V
Typ FET:N and P-Channel
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:Mosfet Array N and P-Channel 40V 30A (Tc) 34W (Tc) Surface Mount PowerPAK® SO-8 Dual
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:30A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung