SQ1912AEEH-T1_GE3
Artikelnummer:
SQ1912AEEH-T1_GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET 2N-CH 20V POWERPAK SC70-6
verfügbare Anzahl:
63517 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SQ1912AEEH-T1_GE3.pdf

Einführung

We can supply SQ1912AEEH-T1_GE3, use the request quote form to request SQ1912AEEH-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQ1912AEEH-T1_GE3.The price and lead time for SQ1912AEEH-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQ1912AEEH-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:PowerPAK® SC-70-6 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:280 mOhm @ 1.2A, 4.5V
Leistung - max:1.5W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerPAK® SC-70-6 Dual
Andere Namen:SQ1912AEEH-T1_GE3-ND
SQ1912AEEH-T1_GE3TR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Eingabekapazität (Ciss) (Max) @ Vds:27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:1.25nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 800mA (Tc) 1.5W Surface Mount PowerPAK® SC-70-6 Dual
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:800mA (Tc)
Email:[email protected]

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