Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 5.5V @ 350µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse: | PG-TO251-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Verlustleistung (max): | 83W (Tc) |
Verpackung: | Tube |
Verpackung / Gehäuse: | TO-251-3 Short Leads, IPak, TO-251AA |
Andere Namen: | SPU07N60S5-ND SPU07N60S5IN SPU07N60S5X SPU07N60S5XK |
Betriebstemperatur: | -55°C ~ 150°C (TJ) |
Befestigungsart: | Through Hole |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 970pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Typ FET: | N-Channel |
FET-Merkmal: | - |
Antriebsspannung (Max Rds On, Min Rds On): | 10V |
Drain-Source-Spannung (Vdss): | 600V |
detaillierte Beschreibung: | N-Channel 600V 7.3A (Tc) 83W (Tc) Through Hole PG-TO251-3 |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 7.3A (Tc) |
Email: | [email protected] |