Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 4V @ 5.5mA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse: | PG-TO220-3-1 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 64A, 10V |
Verlustleistung (max): | 340W (Tc) |
Verpackung: | Tube |
Verpackung / Gehäuse: | TO-220-3 |
Andere Namen: | SP000441774 SPP80P06P G SPP80P06P G-ND SPP80P06P H SPP80P06P H-ND SPP80P06PH |
Betriebstemperatur: | -55°C ~ 175°C (TJ) |
Befestigungsart: | Through Hole |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 5033pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 173nC @ 10V |
Typ FET: | P-Channel |
FET-Merkmal: | - |
Antriebsspannung (Max Rds On, Min Rds On): | 10V |
Drain-Source-Spannung (Vdss): | 60V |
detaillierte Beschreibung: | P-Channel 60V 80A (Tc) 340W (Tc) Through Hole PG-TO220-3-1 |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 80A (Tc) |
Email: | [email protected] |