SPD08N50C3BTMA1
SPD08N50C3BTMA1
Artikelnummer:
SPD08N50C3BTMA1
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 560V 7.6A DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
15176 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SPD08N50C3BTMA1.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.9V @ 350µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PG-TO252-3
Serie:CoolMOS™
Rds On (Max) @ Id, Vgs:600 mOhm @ 4.6A, 10V
Verlustleistung (max):83W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:SP000307395
SPD08N50C3
SPD08N50C3BTMA1-ND
SPD08N50C3BTMA1TR
SPD08N50C3INTR
SPD08N50C3INTR-ND
SPD08N50C3XT
SPD08N50C3XTINTR
SPD08N50C3XTINTR-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):560V
detaillierte Beschreibung:N-Channel 560V 7.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7.6A (Tc)
Email:[email protected]

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