SIRA88DP-T1-GE3
SIRA88DP-T1-GE3
Artikelnummer:
SIRA88DP-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 30V 45.5A POWERPAKSO
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
78399 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIRA88DP-T1-GE3.pdf

Einführung

We can supply SIRA88DP-T1-GE3, use the request quote form to request SIRA88DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIRA88DP-T1-GE3.The price and lead time for SIRA88DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIRA88DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):+20V, -16V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PowerPAK® SO-8
Serie:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:6.7 mOhm @ 10A, 10V
Verlustleistung (max):25W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerPAK® SO-8
Andere Namen:SIRA88DP-T1-GE3TR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:985pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:12.5nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 45.5A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:45.5A (Tc)
Email:[email protected]

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