SIR172ADP-T1-GE3
SIR172ADP-T1-GE3
Artikelnummer:
SIR172ADP-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 30V 24A 8-SO
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
52176 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIR172ADP-T1-GE3.pdf

Einführung

We can supply SIR172ADP-T1-GE3, use the request quote form to request SIR172ADP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIR172ADP-T1-GE3.The price and lead time for SIR172ADP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIR172ADP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PowerPAK® SO-8
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:8.5 mOhm @ 10A, 10V
Verlustleistung (max):29.8W (Tc)
Verpackung:Original-Reel®
Verpackung / Gehäuse:PowerPAK® SO-8
Andere Namen:SIR172ADP-T1-GE3DKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1515pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:44nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 24A (Tc) 29.8W (Tc) Surface Mount PowerPAK® SO-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:24A (Tc)
Email:[email protected]

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