SIHG33N60EF-GE3
SIHG33N60EF-GE3
Artikelnummer:
SIHG33N60EF-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 600V 33A TO-247AC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
40262 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIHG33N60EF-GE3.pdf

Einführung

We can supply SIHG33N60EF-GE3, use the request quote form to request SIHG33N60EF-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG33N60EF-GE3.The price and lead time for SIHG33N60EF-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG33N60EF-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247AC
Serie:-
Rds On (Max) @ Id, Vgs:98 mOhm @ 16.5A, 10V
Verlustleistung (max):278W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3454pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:155nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:33A (Tc)
Email:[email protected]

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