SIE818DF-T1-E3
SIE818DF-T1-E3
Artikelnummer:
SIE818DF-T1-E3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 75V 60A 10-POLARPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
40307 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIE818DF-T1-E3.pdf

Einführung

We can supply SIE818DF-T1-E3, use the request quote form to request SIE818DF-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIE818DF-T1-E3.The price and lead time for SIE818DF-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIE818DF-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:10-PolarPAK® (L)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:9.5 mOhm @ 16A, 10V
Verlustleistung (max):5.2W (Ta), 125W (Tc)
Verpackung:Original-Reel®
Verpackung / Gehäuse:10-PolarPAK® (L)
Andere Namen:SIE818DF-T1-E3DKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3200pF @ 38V
Gate Charge (Qg) (Max) @ Vgs:95nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):75V
detaillierte Beschreibung:N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:60A (Tc)
Email:[email protected]

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