SIA911EDJ-T1-GE3
SIA911EDJ-T1-GE3
Artikelnummer:
SIA911EDJ-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET 2P-CH 20V 4.5A SC70-6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
70860 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIA911EDJ-T1-GE3.pdf

Einführung

We can supply SIA911EDJ-T1-GE3, use the request quote form to request SIA911EDJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA911EDJ-T1-GE3.The price and lead time for SIA911EDJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA911EDJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:PowerPAK® SC-70-6 Dual
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:101 mOhm @ 2.7A, 4.5V
Leistung - max:7.8W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerPAK® SC-70-6 Dual
Andere Namen:SIA911EDJ-T1-GE3TR
SIA911EDJT1GE3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:11nC @ 8V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4.5A
Basisteilenummer:SIA911
Email:[email protected]

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