SI8445DB-T2-E1
SI8445DB-T2-E1
Artikelnummer:
SI8445DB-T2-E1
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET P-CH 20V 9.8A MICROFOOT
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
5406 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI8445DB-T2-E1.pdf

Einführung

We can supply SI8445DB-T2-E1, use the request quote form to request SI8445DB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8445DB-T2-E1.The price and lead time for SI8445DB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8445DB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:850mV @ 250µA
Vgs (Max):±5V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:4-Microfoot
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:84 mOhm @ 1A, 4.5V
Verlustleistung (max):1.8W (Ta), 11.4W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:4-XFBGA, CSPBGA
Andere Namen:SI8445DB-T2-E1TR
SI8445DBT2E1
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:700pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.2V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 9.8A (Tc) 1.8W (Ta), 11.4W (Tc) Surface Mount 4-Microfoot
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9.8A (Tc)
Email:[email protected]

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