SI7111EDN-T1-GE3
SI7111EDN-T1-GE3
Artikelnummer:
SI7111EDN-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET P-CH 30V 60A POWERPAK1212
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
72910 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI7111EDN-T1-GE3.pdf

Einführung

We can supply SI7111EDN-T1-GE3, use the request quote form to request SI7111EDN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7111EDN-T1-GE3.The price and lead time for SI7111EDN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7111EDN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.6V @ 250µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PowerPAK® 1212-8
Serie:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:8.55 mOhm @ 15A, 4.5V
Verlustleistung (max):52W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerPAK® 1212-8
Andere Namen:SI7111EDN-T1-GE3TR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5860pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:46nC @ 2.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):2.5V, 4.5V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:P-Channel 30V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:60A (Tc)
Email:[email protected]

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