SI5517DU-T1-E3
SI5517DU-T1-E3
Artikelnummer:
SI5517DU-T1-E3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N/P-CH 20V 6A CHIPFET
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
16112 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI5517DU-T1-E3.pdf

Einführung

We can supply SI5517DU-T1-E3, use the request quote form to request SI5517DU-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5517DU-T1-E3.The price and lead time for SI5517DU-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5517DU-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:PowerPAK® ChipFet Dual
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:39 mOhm @ 4.4A, 4.5V
Leistung - max:8.3W
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:PowerPAK® ChipFET™ Dual
Andere Namen:SI5517DU-T1-E3CT
SI5517DUT1E3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 8V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array N and P-Channel 20V 6A 8.3W Surface Mount PowerPAK® ChipFet Dual
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6A
Basisteilenummer:SI5517
Email:[email protected]

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