SBC856BDW1T3G
SBC856BDW1T3G
Artikelnummer:
SBC856BDW1T3G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS 2PNP 65V 0.1A SOT-363
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
29928 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SBC856BDW1T3G.pdf

Einführung

We can supply SBC856BDW1T3G, use the request quote form to request SBC856BDW1T3G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SBC856BDW1T3G.The price and lead time for SBC856BDW1T3G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SBC856BDW1T3G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):65V
VCE Sättigung (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Transistor-Typ:2 PNP (Dual)
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:Automotive, AEC-Q101
Leistung - max:380mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:SBC856BDW1T3GOSCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:40 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:100MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
DC Stromgewinn (HFE) (Min) @ Ic, VCE:220 @ 2mA, 5V
Strom - Collector Cutoff (Max):15nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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