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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > RT1E040RPTR
RT1E040RPTR
RT1E040RPTR
Artikelnummer:
RT1E040RPTR
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET P-CH 30V 4A TSST8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
28495 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.RT1E040RPTR.pdf2.RT1E040RPTR.pdf
Anfrage

Einführung

We can supply RT1E040RPTR, use the request quote form to request RT1E040RPTR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RT1E040RPTR.The price and lead time for RT1E040RPTR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RT1E040RPTR.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-TSST
Serie:-
Rds On (Max) @ Id, Vgs:45 mOhm @ 4A, 10V
Verlustleistung (max):550mW (Ta)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-SMD, Flat Lead
Andere Namen:RT1E040RPCT
RT1E040RPTRCT
RT1E040RPTRCT-ND
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:10 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:P-Channel 30V 4A (Ta) 550mW (Ta) Surface Mount 8-TSST
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A (Ta)
Email:[email protected]

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