RN4905T5LFT
RN4905T5LFT
Artikelnummer:
RN4905T5LFT
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS NPN/PNP PREBIAS 0.2W US6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
5875 Pieces
Lieferzeit:
1-2 days
Datenblatt:
RN4905T5LFT.pdf

Einführung

We can supply RN4905T5LFT, use the request quote form to request RN4905T5LFT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN4905T5LFT.The price and lead time for RN4905T5LFT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN4905T5LFT.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor-Typ:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device-Gehäuse:US6
Serie:-
Widerstand - Emitterbasis (R2):47 kOhms
Widerstand - Basis (R1):2.2 kOhms
Leistung - max:200mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:RN4905T5LFTCT
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:200MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 10mA, 5V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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