RN1509(TE85L,F)
RN1509(TE85L,F)
Artikelnummer:
RN1509(TE85L,F)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS 2NPN PREBIAS 0.3W SMV
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
75917 Pieces
Lieferzeit:
1-2 days
Datenblatt:
RN1509(TE85L,F).pdf

Einführung

We can supply RN1509(TE85L,F), use the request quote form to request RN1509(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1509(TE85L,F).The price and lead time for RN1509(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1509(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor-Typ:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Supplier Device-Gehäuse:SMV
Serie:-
Widerstand - Emitterbasis (R2):22 kOhms
Widerstand - Basis (R1):47 kOhms
Leistung - max:300mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-74A, SOT-753
Andere Namen:RN1509(TE85LF)TR
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:250MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 300mW Surface Mount SMV
DC Stromgewinn (HFE) (Min) @ Ic, VCE:70 @ 10mA, 5V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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