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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > RCD060N25TL
RCD060N25TL
RCD060N25TL
Artikelnummer:
RCD060N25TL
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 250V 6A CPT3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
39472 Pieces
Lieferzeit:
1-2 days
Datenblatt:
RCD060N25TL.pdf
Anfrage

Einführung

We can supply RCD060N25TL, use the request quote form to request RCD060N25TL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RCD060N25TL.The price and lead time for RCD060N25TL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RCD060N25TL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:CPT3
Serie:-
Rds On (Max) @ Id, Vgs:530 mOhm @ 3A, 10V
Verlustleistung (max):850mW (Ta), 20W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):250V
detaillierte Beschreibung:N-Channel 250V 6A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6A (Tc)
Email:[email protected]

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