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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > R6030KNZC8
R6030KNZC8
R6030KNZC8
Artikelnummer:
R6030KNZC8
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CHANNEL 600V 30A TO3PF
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
64495 Pieces
Lieferzeit:
1-2 days
Datenblatt:
R6030KNZC8.pdf
Anfrage

Einführung

We can supply R6030KNZC8, use the request quote form to request R6030KNZC8 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number R6030KNZC8.The price and lead time for R6030KNZC8 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# R6030KNZC8.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-3PF
Serie:-
Rds On (Max) @ Id, Vgs:130 mOhm @ 14.5A, 10V
Verlustleistung (max):86W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-3P-3 Full Pack
Andere Namen:R6030KNZC8TR
R6030KNZC8TR-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:15 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-3PF
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:30A (Tc)
Email:[email protected]

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