Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Transistor-Typ: | 2 NPN - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | 6-TSSOP |
Serie: | - |
Widerstand - Emitterbasis (R2): | 4.7 kOhms |
Widerstand - Basis (R1): | 4.7 kOhms |
Leistung - max: | 300mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 6-TSSOP, SC-88, SOT-363 |
Andere Namen: | 1727-1981-2 568-12014-2 568-12014-2-ND 934057896115 PUMH15 T/R PUMH15 T/R-ND PUMH15,115-ND |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | - |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 30 @ 10mA, 5V |
Strom - Collector Cutoff (Max): | 1µA |
Strom - Kollektor (Ic) (max): | 100mA |
Email: | [email protected] |