PSMN018-100ESFQ
Artikelnummer:
PSMN018-100ESFQ
Hersteller:
Nexperia
Beschreibung:
MOSFET N-CHANNEL 100V 53A I2PAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
20081 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PSMN018-100ESFQ.pdf

Einführung

We can supply PSMN018-100ESFQ, use the request quote form to request PSMN018-100ESFQ pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PSMN018-100ESFQ.The price and lead time for PSMN018-100ESFQ depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PSMN018-100ESFQ.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:I2PAK
Serie:-
Rds On (Max) @ Id, Vgs:18 mOhm @ 15A, 10V
Verlustleistung (max):111W (Ta)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3, Short Tab
Andere Namen:934068749127
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1482pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:21.4nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):7V, 10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 53A (Ta) 111W (Ta) Through Hole I2PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:53A (Ta)
Email:[email protected]

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