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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > PMZ1000UN,315
PMZ1000UN,315
PMZ1000UN,315
Artikelnummer:
PMZ1000UN,315
Hersteller:
Nexperia
Beschreibung:
MOSFET N-CH SOT883
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
48308 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PMZ1000UN,315.pdf
Anfrage

Einführung

We can supply PMZ1000UN,315, use the request quote form to request PMZ1000UN,315 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PMZ1000UN,315.The price and lead time for PMZ1000UN,315 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PMZ1000UN,315.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:950mV @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DFN1006-3
Serie:-
Rds On (Max) @ Id, Vgs:1 Ohm @ 200mA, 4.5V
Verlustleistung (max):350mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-101, SOT-883
Andere Namen:1727-5860-2
568-7439-2
568-7439-2-ND
934063419315
PMZ1000UN,315-ND
PMZ1000UN315
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:43pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:0.89nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 480mA (Ta) 350mW (Ta) Surface Mount DFN1006-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:480mA (Ta)
Email:[email protected]

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