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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > PMPB215ENEA/FX
PMPB215ENEA/FX
Artikelnummer:
PMPB215ENEA/FX
Hersteller:
Nexperia
Beschreibung:
MOSFET N-CH 80V 2.8A 6DFN2020MD
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
49327 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PMPB215ENEA/FX.pdf
Anfrage

Einführung

We can supply PMPB215ENEA/FX, use the request quote form to request PMPB215ENEA/FX pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PMPB215ENEA/FX.The price and lead time for PMPB215ENEA/FX depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PMPB215ENEA/FX.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.7V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:6-DFN2020MD (2x2)
Serie:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:230 mOhm @ 1.9A, 10V
Verlustleistung (max):1.6W (Ta)
Verpackung / Gehäuse:6-UDFN Exposed Pad
Andere Namen:934070282115
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:215pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:7.2nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):80V
detaillierte Beschreibung:N-Channel 80V 2.8A (Ta) 1.6W (Ta) Surface Mount 6-DFN2020MD (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.8A (Ta)
Email:[email protected]

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