PHN210T,118
Artikelnummer:
PHN210T,118
Hersteller:
Nexperia
Beschreibung:
MOSFET 2N-CH 30V 8SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
50450 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PHN210T,118.pdf

Einführung

We can supply PHN210T,118, use the request quote form to request PHN210T,118 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PHN210T,118.The price and lead time for PHN210T,118 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PHN210T,118.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.8V @ 1mA
Supplier Device-Gehäuse:8-SO
Serie:TrenchMOS™
Rds On (Max) @ Id, Vgs:100 mOhm @ 2.2A, 10V
Leistung - max:2W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:1727-1546-2
568-11062-2
568-11062-2-ND
934055451118
PHN210T /T3
PHN210T /T3-ND
PHN210T,118-ND
Betriebstemperatur:-65°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:250pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:6nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 2W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:-
Email:[email protected]

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