Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Transistor-Typ: | NPN - Pre-Biased |
Supplier Device-Gehäuse: | TO-92-3 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 10 kOhms |
Leistung - max: | 500mW |
Verpackung: | Tape & Box (TB) |
Verpackung / Gehäuse: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andere Namen: | 934047440126 PDTC114ES AMO PDTC114ES AMO-ND |
Befestigungsart: | Through Hole |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 30 @ 5mA, 5V |
Strom - Collector Cutoff (Max): | 1µA |
Strom - Kollektor (Ic) (max): | 100mA |
Basisteilenummer: | PDTC114 |
Email: | [email protected] |