PDTC114ES,126
PDTC114ES,126
Artikelnummer:
PDTC114ES,126
Hersteller:
NXP Semiconductors / Freescale
Beschreibung:
TRANS PREBIAS NPN 500MW TO92-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
11620 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PDTC114ES,126.pdf

Einführung

We can supply PDTC114ES,126, use the request quote form to request PDTC114ES,126 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PDTC114ES,126.The price and lead time for PDTC114ES,126 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PDTC114ES,126.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:TO-92-3
Serie:-
Widerstand - Emitterbasis (R2):10 kOhms
Widerstand - Basis (R1):10 kOhms
Leistung - max:500mW
Verpackung:Tape & Box (TB)
Verpackung / Gehäuse:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Andere Namen:934047440126
PDTC114ES AMO
PDTC114ES AMO-ND
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:30 @ 5mA, 5V
Strom - Collector Cutoff (Max):1µA
Strom - Kollektor (Ic) (max):100mA
Basisteilenummer:PDTC114
Email:[email protected]

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