Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Transistor-Typ: | PNP - Pre-Biased |
Supplier Device-Gehäuse: | TO-92-3 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 2.2 kOhms |
Leistung - max: | 500mW |
Verpackung: | Tape & Box (TB) |
Verpackung / Gehäuse: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andere Namen: | 934059148126 PDTB123YS AMO PDTB123YS AMO-ND |
Befestigungsart: | Through Hole |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 70 @ 50mA, 5V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 500mA |
Basisteilenummer: | PDTB123 |
Email: | [email protected] |