Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V, 60V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A |
Transistor-Typ: | 1 NPN Pre-Biased, 1 PNP |
Supplier Device-Gehäuse: | 6-TSOP |
Serie: | - |
Widerstand - Emitterbasis (R2): | 2.2 kOhms |
Widerstand - Basis (R1): | 2.2 kOhms |
Leistung - max: | 760mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | SC-74, SOT-457 |
Andere Namen: | 1727-2377-2 568-12676-2 568-12676-2-ND 934061568115 PBLS6021D,115-ND |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 150MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 1.5A 150MHz 760mW Surface Mount 6-TSOP |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 30 @ 20mA, 5V / 140 @ 1A, 2V |
Strom - Collector Cutoff (Max): | 1µA, 100nA |
Strom - Kollektor (Ic) (max): | 100mA, 1.5A |
Email: | [email protected] |