NVTFS4824NTWG
NVTFS4824NTWG
Artikelnummer:
NVTFS4824NTWG
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 18.2A 8WDFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
37133 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NVTFS4824NTWG.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-WDFN (3.3x3.3)
Serie:-
Rds On (Max) @ Id, Vgs:4.7 mOhm @ 23A, 10V
Verlustleistung (max):3.2W (Ta), 21W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerWDFN
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:40 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1740pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 18.2A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:18.2A (Ta)
Email:[email protected]

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