NVMFS6B05NLT3G
NVMFS6B05NLT3G
Artikelnummer:
NVMFS6B05NLT3G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 100V 17A 5DFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS nicht konform
verfügbare Anzahl:
72986 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NVMFS6B05NLT3G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:5-DFN (5x6) (8-SOFL)
Serie:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:5.6 mOhm @ 20A, 10V
Verlustleistung (max):3.8W (Ta), 165W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:42 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Email:[email protected]

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