NVMFD5C680NLT1G
NVMFD5C680NLT1G
Artikelnummer:
NVMFD5C680NLT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 60V 26A S08FL
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
18470 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NVMFD5C680NLT1G.pdf

Einführung

We can supply NVMFD5C680NLT1G, use the request quote form to request NVMFD5C680NLT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NVMFD5C680NLT1G.The price and lead time for NVMFD5C680NLT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NVMFD5C680NLT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.2V @ 13µA
Supplier Device-Gehäuse:8-DFN (5x6) Dual Flag (SO8FL-Dual)
Serie:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:28 mOhm @ 5A, 10V
Leistung - max:3W (Ta), 19W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:NVMFD5C680NLT1G-ND
NVMFD5C680NLT1GOSTR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:50 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:2nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 60V 7.5A (Ta), 26A (Tc) 3W (Ta), 19W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7.5A (Ta), 26A (Tc)
Email:[email protected]

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