NVMFD5853NT1G
NVMFD5853NT1G
Artikelnummer:
NVMFD5853NT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 40V 12A SO8FL
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
13047 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NVMFD5853NT1G.pdf

Einführung

We can supply NVMFD5853NT1G, use the request quote form to request NVMFD5853NT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NVMFD5853NT1G.The price and lead time for NVMFD5853NT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NVMFD5853NT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Supplier Device-Gehäuse:8-DFN (5x6) Dual Flag (SO8FL-Dual)
Serie:-
Rds On (Max) @ Id, Vgs:10 mOhm @ 15A, 10V
Leistung - max:3.1W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:NVMFD5853NT1G-ND
NVMFD5853NT1GOSTR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:50 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1225pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 40V 12A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A
Email:[email protected]

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