NTMFS4C05NT1G-001
NTMFS4C05NT1G-001
Artikelnummer:
NTMFS4C05NT1G-001
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 11.9A SO8FL
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
79452 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTMFS4C05NT1G-001.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:5-DFN (5x6) (8-SOFL)
Serie:-
Rds On (Max) @ Id, Vgs:3.4 mOhm @ 30A, 10V
Verlustleistung (max):770mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1972pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 11.9A (Ta), 78A (Tc) 770mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11.9A (Ta), 78A (Tc)
Email:[email protected]

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