NTHC5513T1
NTHC5513T1
Artikelnummer:
NTHC5513T1
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N/P-CH 20V CHIPFET
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
30511 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTHC5513T1.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.2V @ 250µA
Supplier Device-Gehäuse:ChipFET™
Serie:-
Rds On (Max) @ Id, Vgs:80 mOhm @ 2.9A, 4.5V
Leistung - max:1.1W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SMD, Flat Lead
Andere Namen:NTHC5513T1OS
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:180pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array N and P-Channel 20V 2.9A, 2.2A 1.1W Surface Mount ChipFET™
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.9A, 2.2A
Basisteilenummer:NTHC5513
Email:[email protected]

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