NTD5865NT4G
NTD5865NT4G
Artikelnummer:
NTD5865NT4G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 60V 43A DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
55933 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTD5865NT4G.pdf

Einführung

We can supply NTD5865NT4G, use the request quote form to request NTD5865NT4G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTD5865NT4G.The price and lead time for NTD5865NT4G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTD5865NT4G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DPAK
Serie:-
Rds On (Max) @ Id, Vgs:18 mOhm @ 20A, 10V
Verlustleistung (max):71W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:NTD5865NT4GOSCT
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1261pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:43A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung