NTD4810NT4G
NTD4810NT4G
Artikelnummer:
NTD4810NT4G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 9A DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
60832 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTD4810NT4G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DPAK
Serie:-
Rds On (Max) @ Id, Vgs:10 mOhm @ 30A, 10V
Verlustleistung (max):1.4W (Ta), 50W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:NTD4810NT4G-ND
NTD4810NT4GOSTR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1350pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 11.5V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 9A (Ta), 54A (Tc) 1.4W (Ta), 50W (Tc) Surface Mount DPAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9A (Ta), 54A (Tc)
Email:[email protected]

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